INTRODUCTION
A laser diode is a component that converts an electrical signal into a corrsponding light signal. They are offered from a many different companies such as PerkinElmer and Hamamatsu.
The two most important characteristics when dealing with laser diodes are whether the need is for a CW (continuous wave) of Pulse laser diode, and what wavelength to work in.
Laser diodes can be categorized in two groups: CW and Pulse. In deciding whether to use a CW of Pulse laser diode, a look at the design should be informative as to which laser diode to use. CW laser diodes are designed with heat removal and laser-threshold minimization as the key factors. However, Pulse laser diodes operate at a low duty cycle, and are designed to be driven with high-current pulses to produce a high-power optical signal. A typical Pulse laser diode has a duty cycle less than 0.1 %. So a 100 nanosecond optical pulse would be followed by a pause of 100 microseconds.
The wavelength of the laser diode is another important design parameter. Figure 1 shows a low detail look at the frequency spectrum. Typically, laser diodes operate in the visible and infrared regions. The differentiation of which region to use is a matter of the interaction of light and its environment. For example, InGaAsP laser diodes are used for Telecommunications, while AlGaAs laser diodes are used to CD players. A quick reference to check this can be found at Wikipedia. Typically, laser diodes in the visible region operate with red light. Another bit of advice is that infrared laser diodes are not visible, and as such can be very much more harmful than a visible laser diode due to the fact that it would not be known if the laser diode is pointed towards the eye.
DEFINITION OF LASER DIODE
A laser diode is a laser where the active medium is a semiconductor similar to that found in a light-emitting diode. The most common and practical type of laser diode is formed from a p-n junction and powered by injected electric current. These devices are sometimes referred to as injection laser diodes to distinguish them from (optically) pumped laser diodes, which are more easily manufactured in the laboratory.
Theory of operation
A laser diode, like many other semiconductor devices, is formed by doping a very thin layer on the surface of a crystal wafer. The crystal is doped to produce an n-type region and a p-type region, one above the other, resulting in a p-n junction, or diode.
The many types of diode lasers known today collectively form a subset of the larger classification of semiconductor p-n junction diodes. Just as in any semiconductor p-n junction diode, forward electrical bias causes the two species of charge carrier - holes and electrons - to be "injected" from opposite sides of the p-n junction into the depletion region, situated at its heart. Holes are injected from the p-doped, and electrons from the n-doped, semiconductor. (A depletion region, devoid of any charge carriers, forms automatically and unavoidably as a result of the difference in chemical potential between n- and p-type semiconductors wherever they are in physical contact.)
As charge injection is a distinguishing feature of diode lasers as compared to all other lasers, diode lasers are traditionally and more formally called "injection lasers." (This terminology differentiates diode lasers, e.g., from flashlamp-pumped solid state lasers, such as the ruby laser. Interestingly, whereas the term "solid-state" was extremely apt in differentiating 1950s-era semiconductor electronics from earlier generations of vacuum electronics, it would not have been adequate to convey unambiguously the unique characteristics defining 1960s-era semiconductor lasers.) When an electron and a hole are present in the same region, they may recombine or "annihilate" with the result being spontaneous emission — i.e., the electron may re-occupy the energy state of the hole, emitting a photon with energy equal to the difference between the electron and hole states involved. (In a conventional semiconductor junction diode, the energy released from the recombination of electrons and holes is carried away as phonons, i.e., lattice vibrations, rather than as photons.) Spontaneous emission gives the laser diode below lasing threshold similar properties to an LED. Spontaneous emission is necessary to initiate laser oscillation, but it is one among several sources of inefficiency once the laser is oscillating.
The difference between the photon-emitting semiconductor laser (or LED) and conventional phonon-emitting (non-light-emitting) semiconductor junction diodes lies in the use of a different type of semiconductor, one whose physical and atomic structure confers the possibility for photon emission. These photon-emitting semiconductors are the so-called "direct bandgap" semiconductors. The properties of silicon and germanium, which are single-element semiconductors, have bandgaps that do not align in the way needed to allow photon emission and are not considered "direct." Other materials, the so-called compound semiconductors, have virtually identical crystalline structures as silicon or germanium but use alternating arrangements of two different atomic species in a checkerboard-like pattern to break the symmetry. The transition between the materials in the alternating pattern creates the critical "direct bandgap" property. Gallium arsenide, indium phosphide, gallium antimonide, and gallium nitride are all examples of compound semiconductor materials that can be used to create junction diodes that emit light.
DIAGRAM OF LASER DIODE
+ +
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______________|______________ _______|_______
Laser | P type semiconductor | Laser | P type |
beam | | beam | |
<=======|:::::::::::::::::::::::::::::|=======> |ooooooooooooooo|
| Junction---^ | | |
End ->| N type semiconductor |<- End | N type |
facet |_____________________________| facet |_______________|
| |
o o
- -
(Side view) (End view)
|<----------------------- 1 mm ------------------------>|
A rough diagram of a laser diode of the type found in a laser pointer or CD player is shown below. This is in no way to scale. The size of the overall package will typically be 5 to 10 mm overall but the actual laser diode chip will be less than 1 mm in length.
___
| | Metal case
| |_______________________________
| \
| _____________________________ |
| | | |
LD -------:===:------------------+ | |
| |__ | |__|
| | |___ ______|______ : :
| | | | | | : :
PD -------:===:----+ |<---|:::::::::::::|============> Main beam
| | |___|____|_____________|_ : : (divergent)
| | Photodiode Laser diode | :__:
| |\__________________________| | | Protective window
Com -------+ | Heat sink | |
| |_____________________________| |
| |
| _______________________________/
| |
|___|
The main beam as it emerges from the laser diode is wedge shaped and highly divergent (unlike a helium-neon laser) with a typical spread of 10 by 30 degrees. External optics are required to produce anything approaching a parallel (collimated) beam. A simple (spherical) short focal length convex lens will work reasonably well for this purpose but diode laser modules and laser pointers might use a lens where at least one surface is aspheric (not ground to a spherical shape as are with most common lenses).
In the case of a sample I removed from a dead diode laser module, the surface facing the laser diode was slightly curved and aspheric while the other surface was highly curved and spherical. The effective focal length of the lens was about 5 mm. It appeared similar to the objective lens of a CD player - which was perhaps its original intended application and thus a low cost source for such optics.
Due to the nature of the emitting junction which results in a wedge shaped beam and unequal divergence (10 x 30 degrees typical), a laser diode is somewhat astigmatic. In effect, the focal length required to collimate the beam in X and Y differs very slightly. Thus, an additional cylindrical lens or a single lens with an astigmatic curvature is required to fully compensate for this characteristic. However, the amount of astigmatism is usually small and can often be ignored. The general beam shape is elliptical or rectangular but this can be circularized by a pair of prisms.
The light from these edge emitting laser diodes is generally linearly polarized. You can easily confirm this even with a simple laser pointer by reflecting at about a 45 degree angle from a piece of glass (not a metal coated mirror). Rotate the pointer and watch the reflection - there will be a very distinct minimum and maximum with the elongated shape of the beam at close range being aligned with the glass and perpendicular, respectively.
HISTORY
The first to demonstrate coherent light emission from a semiconductor diode (the first laser diode), is widely acknowledged to have been Robert N. Hall and his team at the General Electric research center in 1962.The first visible wavelength laser diode was demonstrated by Nick Holonyak, Jr. later in 1962.
Other teams at IBM, MIT Lincoln Laboratory, Texas Instruments, and RCA Laboratories were also involved in and received credit for their historic initial demonstrations of efficient light emission and lasing in semiconductor diodes in 1962 and thereafter. GaAs lasers were also produced in early 1963 in the Soviet Union by the team led by Nikolay Basov.
In the early 1960s liquid phase epitaxy (LPE) was invented by Herbert Nelson of RCA Laboratories. By layering the highest quality crystals of varying compositions, it enabled the demonstration of the highest quality heterojunction semiconductor laser materials for many years. LPE was adopted by all the leading laboratories, worldwide and used for many years. It was finally supplanted in the 1970s by molecular beam epitaxy and organometallic chemical vapor deposition.
Diode lasers of that era operated with threshold current densities of 1000 A/cm2 at 77 K temperatures. Such performance enabled continuous-lasing to be demonstrated in the earliest days. However, when operated at room temperature, about 300 K, threshold current densities were two orders of magnitude greater, or 100,000 A/cm2 in the best devices. The dominant challenge for the remainder of the 1960s was to obtain low threshold current density at 300 K and thereby to demonstrate continuous-wave lasing at room temperature from a diode laser.
The first diode lasers were homojunction diodes. That is, the material (and thus the bandgap) of the waveguide core layer and that of the surrounding clad layers, were identical. It was recognized that there was an opportunity, particularly afforded by the use of liquid phase epitaxy using aluminum gallium arsenide, to introduce heterojunctions. Heterostructures consist of layers of semiconductor crystal having varying bandgap and refractive index. Heterojunctions (formed from heterostructures) had been recognized by Herbert Kroemer, while working at RCA Laboratories in the mid-1950s, as having unique advantages for several types of electronic and optoelectronic devices including diode lasers. LPE afforded the technology of making heterojunction diode lasers.
The first heterojunction diode lasers were single-heterojunction lasers. These lasers utilized aluminum gallium arsenide p-type injectors situated over n-type gallium arsenide layers grown on the substrate by LPE. An admixture of aluminum replaced gallium in the semiconductor crystal and raised the bandgap of the p-type injector over that of the n-type layers beneath. It worked; the 300 K threshold currents went down by 10× to 10,000 amperes per square centimeter. Unfortunately, this was still not in the needed range and these single-heterostructure diode lasers did not function in continuous wave operation at room temperature.
TYPES OF LASER DIODES
The simple laser diode structure, described above, is extremely inefficient. Such devices require so much power that they can only achieve pulsed operation without damage. Although historically important and easy to explain, such devices are not practical.
Double heterostructure lasers
In these devices, a layer of low bandgap material is sandwiched between two high bandgap layers. One commonly-used pair of materials is gallium arsenide (GaAs) with aluminium gallium arsenide (AlxGa(1-x)As). Each of the junctions between different bandgap materials is called a heterostructure, hence the name "double heterostructure laser" or DH laser. The kind of laser diode described in the first part of the article may be referred to as a homojunction laser, for contrast with these more popular devices.
The advantage of a DH laser is that the region where free electrons and holes exist simultaneously—the active region—is confined to the thin middle layer. This means that many more of the electron-hole pairs can contribute to amplification—not so many are left out in the poorly amplifying periphery. In addition, light is reflected from the heterojunction; hence, the light is confined to the region where the amplification takes place.
Quantum well lasers
If the middle layer is made thin enough, it acts as a quantum well. This means that the vertical variation of the electron's wavefunction, and thus a component of its energy, is quantized. The efficiency of a quantum well laser is greater than that of a bulk laser because the density of states function of electrons in the quantum well system has an abrupt edge that concentrates electrons in energy states that contribute to laser action.
Lasers containing more than one quantum well layer are known as multiple quantum well lasers. Multiple quantum wells improve the overlap of the gain region with the optical waveguide mode.
Further improvements in the laser efficiency have also been demonstrated by reducing the quantum well layer to a quantum wire or to a "sea" of quantum dots.
Quantum cascade lasers
In a quantum cascade laser, the difference between quantum well energy levels is used for the laser transition instead of the bandgap. This enables laser action at relatively long wavelengths, which can be tuned simply by altering the thickness of the layer. They are heterojunction lasers.
Separate confinement heterostructure lasers
The problem with the simple quantum well diode described above is that the thin layer is simply too small to effectively confine the light. To compensate, another two layers are added on, outside the first three. These layers have a lower refractive index than the centre layers, and hence confine the light effectively. Such a design is called a separate confinement heterostructure (SCH) laser diode. Almost all commercial laser diodes since the 1990s have been SCH quantum well diodes.
Distributed feedback lasers
Distributed feedback lasers (DFB) are the most common transmitter type in DWDM-systems. To stabilize the lasing wavelength, a diffraction grating is etched close to the p-n junction of the diode. This grating acts like an optical filter, causing a single wavelength to be fed back to the gain region and lase. Since the grating provides the feedback that is required for lasing, reflection from the facets is not required. Thus, at least one facet of a DFB is anti-reflection coated. The DFB laser has a stable wavelength that is set during manufacturing by the pitch of the grating, and can only be tuned slightly with temperature. Such lasers are the workhorse of demanding optical communication.
VCSELs
Vertical-cavity surface-emitting lasers (VCSELs) have the optical cavity axis along the direction of current flow rather than perpendicular to the current flow as in conventional laser diodes. The active region length is very short compared with the lateral dimensions so that the radiation emerges from the surface of the cavity rather than from its edge as shown in the figure. The reflectors at the ends of the cavity are dielectric mirrors made from alternating high and low refractive index quarter-wave thick multilayer.
Such dielectric mirrors provide a high degree of wavelength-selective reflectance at the required free surface wavelength λ if the thicknesses of alternating layers d1 and d2 with refractive indices n1 and n2 are such that n1d1 + n2d2 = 1 / 2λ which then leads to the constructive interference of all partially reflected waves at the interfaces. But there is a disadvantage: because of the high mirror reflectivities, VCSELs have lower output powers when compared to edge-emitting lasers.
There are several advantages to producing VCSELs when compared with the production process of edge-emitting lasers. Edge-emitters cannot be tested until the end of the production process. If the edge-emitter does not work, whether due to bad contacts or poor material growth quality, the production time and the processing materials have been wasted. Additionally, because VCSELs emit the beam perpendicular to the active region of the laser as opposed to parallel as with an edge emitter, tens of thousands of VCSELs can be processed simultaneously on a three inch Gallium Arsenide wafer. Furthermore, even though the VCSEL production process is more labor and material intensive, the yield can be controlled to a more predictable outcome.
Applications of laser diodes
Laser diodes can be arrayed to produce very high power (continuous wave or pulsed) outputs. Such arrays may be used to efficiently pump solid state lasers for inertial confinement fusion or high average power drilling or burning applications.
Laser diodes are numerically the most common type of laser, with 2004 sales of approximately 733 million diode lasers, as compared to 131,000 of other types of lasers.
Laser diodes find wide use in telecommunication as easily modulated and easily coupled light sources for fiber optics communication. They are used in various measuring instruments, such as rangefinders. Another common use is in barcode readers. Visible lasers, typically red but later also green, are common as laser pointers. Both low and high-power diodes are used extensively in the printing industry both as light sources for scanning (input) of images and for very high-speed and high-resolution printing plate (output) manufacturing. Infrared and red laser diodes are common in CD players, CD-ROMs and DVD technology. Violet lasers are used in HD DVD and Blu-ray technology. Diode lasers have also found many applications in laser absorption spectrometry (LAS) for high-speed, low-cost assessment or monitoring of the concentration of various species in gas phase. High-power laser diodes are used in industrial applications such as heat treating, cladding, seam welding and for pumping other lasers, such as diode pumped solid state lasers.
Applications of laser diodes can be categorized in various ways. Most applications could be served by larger solid state lasers or optical parametric oscillators, but the low cost of mass-produced diode lasers makes them essential for mass-market applications. Diode lasers can be used in a great many fields; since light has many different properties (power, wavelength and spectral quality, beam quality, polarization, etc.) it is interesting to classify applications by these basic properties.
Many applications of diode lasers primarily make use of the "directed energy" property of an optical beam. In this category one might include the laser printers, bar-code readers, image scanning, illuminators, designators, optical data recording, combustion ignition, laser surgery, industrial sorting, industrial machining, and directed energy weaponry. Some of these applications are emerging while others are well-established.
Laser medicine: medicine and especially dentistry have found many new applications for diode lasers.The shrinking size of the units and their increasing user friendliness makes them very attractive to clinicians for minor soft tissue procedures. The 800 nm - 980 nm units have a high absorption rate for hemoglobin and thus make them ideal for soft tissue applications, where good hemostasis is necessary.
Applications which may today or in the future make use of the coherence of diode-laser-generated light include interferometric distance measurement, holography, coherent communications, and coherent control of chemical reactions.
Applications which may make use of "narrow spectral" properties of diode lasers include range-finding, telecommunications, infra-red countermeasures, spectroscopic sensing, generation of radio-frequency or terahertz waves, atomic clock state preparation, quantum key cryptography, frequency doubling and conversion, water purification (in the UV), and photodynamic therapy (where a particular wavelength of light would cause a substance such as porphyrin to become chemically active as an anti-cancer agent only where the tissue is illuminated by light).
Applications where the desired quality of laser diodes is their ability to generate ultra-short pulses of light by the technique known as "mode-locking" include clock distribution for high-performance integrated circuits, high-peak-power sources for laser-induced breakdown spectroscopy sensing, arbitrary waveform generation for radio-frequency waves, photonic sampling for analog-to-digital conversion, and optical code-division-multiple-access systems for secure communication.
SOME PROPERTIES OF LASER DIODE
Some important properties of laser diodes are determined by the geometry of the optical cavity. Generally, in the vertical direction, the light is contained in a very thin layer, and the structure supports only a single optical mode in the direction perpendicular to the layers. In the lateral direction, if the waveguide is wide compared to the wavelength of light, then the waveguide can support multiple lateral optical modes, and the laser is known as "multi-mode". These laterally multi-mode lasers are adequate in cases where one needs a very large amount of power, but not a small diffraction-limited beam; for example in printing, activating chemicals, or pumping other types of lasers.
In applications where a small focused beam is needed, the waveguide must be made narrow, on the order of the optical wavelength. This way, only a single lateral mode is supported and one ends up with a diffraction-limited beam. Such single spatial mode devices are used for optical storage, laser pointers, and fiber optics.
EXAMPLES OF LASER DIODES
A Variety of Small Laser Diodes" shows those typically found in CD players, CDROM drives, laser printers, and bar code scanners. These were scanned at 150 dpi. The laser diodes on the left are from CD players, CDROM drives, and laser printers. The one in the middle is also from a laser printer. The components of the diode laser module on the right are from a bar code scanner. The actual laser diode is mounted at the rear end of the aluminum block and the single element plastic lens is all that is needed to provide a reasonably well focused beam.
The closeups below were scanned at 600 dpi - laser diodes (at least the small ones we are dealing with) are really not this HUGE! These two laser diodes can also be found in the group photo, above.
The Closeup of laser diode from the Sony KSS361A Optical Pickup shows a type that is found in many CD players and CDROM drives manufactured by Sony. The actual laser diode is inside the brass barrel shown in the photo of the optical pickup. The front of the package is angled so that the exit window (anti-reflection coated) is also mounted at angle to prevent any remaining reflections from the window's surfaces - as small as the are - from feeding back into the laser diode's cavity or interfering with the detected signal. The output of these edge emitting laser diodes is polarized.
The Closeup of Typical Laser Diode shows one that is from a laser printer. It was mounted in a massive module (relative to the size of this laser diode, at least) which included the objective lens and provided the very important heat sink. In some high performance laser printers, a solid state Peltier cooler is used to stabilize the temperature of the laser diode. The low power laser diodes in CD and LD players, and CDROM and other optical drives (at least read-only types) get away with at most, the heat sink provided by the casting of the optical block - and many don't even need this being of all plastic construction.
Differences Between LEDs and Laser Diodes
One can think of an LED as a laser without a feedback cavity. The LED emits photons from recombining electrons. It has a very broad spectrum.
When we add a high Q cavity to it, the feedback can be high enough to trigger true laser action. Most laser diodes have the cavity built right into the device but there are such things as external cavity diode lasers.
The addition of the high Q cavity cuts down drastically the number of modes operating (in fact, it is almost improper to speak of mode structure with an LED. The result is that the emission line narrows drastically (more monochromatic) and the beam narrows somewhat spatially. One can still not easily get true single mode lasing with normal diode lasers, however, so the line will not be as sharp as a gas laser, nor the beam as narrow.
Comparisons of Diode Lasers with Other Types of Lasers
While a laser diode is a true laser and not just a glorified (and expensive) LED, there are major difference compared to a gas or solid state laser - not all of them bad.
Yes indeed, a diode laser is a true laser. That being said, looking at matters quantitatively, it is harder to make a diode laser with a very narrow line emission than a gas laser or large crystal laser. Adding cavity length to a laser in general acts to narrow the line (in spectral space, though a higher Q cavity does tend to narrow beam in space also). It is possible to use a larger, high Q external cavity with a laser diode to increase its coherence.
A couple of minor points:
High Q cavities narrow the spatial profile only if they are confocal - planar high Q cavities (as in diode lasers, and especially vertical-cavity diode lasers) are prone to problems with walk-off and the mode must be confined physically.
In a gas laser, you also start with a much narrower fluorescence line and thus the gain spectrum is limited spectrally. Diode lasers (being band-to-band or excitonic semiconductor transitions) have much broader fluorescence spectra.
The typical edge-emitting diode laser actually lases in quite a few fundamental modes (especially when operated using its own facets as the cavity) and though each lasing mode is "monochromatic", the overall spectrum really isn't. External cavities are really the only way to obtain approximately single mode operation from an edge-emitting diode laser.
VCSELs are usually true single mode devices. The reason you can get away with lengthening the cavity in a gas laser is that you don't need to worry about lowering the free spectral range because the gain bandwidth is small.
DFB or DBR lasers achieve very similar results and have Side mode suppression ratios better than 30 db. These lasers have been the mainstay of Optical fiber base telecom for a while now.
DFB Lasers are use for long haul telecommunications network - the kind used by say Sprint (>1GB for up to 25 miles) for their phone networks between cities. These have been for Trans-Atlantic cables (TAT) between US and Europe. LEDs are used more for FDDI type application between computers (~100Mb and less than 1 mile).
While LEDs are quite popular in Datacom applications (read short distances), Telecom applications typically use DFBs, either directly modulated for low speeds (e.g., OC-3 155 Mb/sec) or externally modulated for high speeds (e.g., OC-48 2.5 Gb/sec). Distances can typically range over tens of kilometers, to hundreds of kilometers with optical amplification, sans repeaters.
ADVANTAGES OF LASER DIODES
1.) Smaller size - Unlike the FP cavity of an edge emitting laser diode which is 250 to 500 um in length, the entire size of a VCSEL is limited by the dimensions of the emitting region and space for electrical contacts. Thus, the die for a complete VCSEL can potentially be only slightly larger than the beam size! Currently available devices with a 25 um circular beam are about 100 um on a side but this can certainly be reduced to 50 um or less. Smaller size can translate into a larger yield per wafer and lower costs as well a higher packing densities for laser array applications.
2.) Simplified manufacturing - FP laser diodes must be diced up (and possibly even mounted) just to determine which are good and which are bad. They cannot be tested at all when part of the original wafer since the edges haven't been cleaved yet. This is an expensive time consuming process and results in a lot of wasted effort and materials.
On the other hand, an entire wafer of VCSELs can be tested as a unit with each device evaluated for lasing threshold and power, and beam shape, quality, and stability, It is possible to form millions of VCSELs on a single wafer as a batch process and then test and evaluate the performance of each one automatically. The entire wafer can be burned in to eliminate infant mortalities and assure higher reliability of the final product. Each device can then be packaged or thrown away based on these findings.
3.) Simplified mounting and packaging. Virtually the same equipment that is used for final assembly of devices like other ICs can be used for VCSELs since they are attached flat on the package substrate and shine through an window like that of an EPROM (but of higher optical quality) or merged with an optical fiber assembly as required.VCSELS can use inexpensive plastic packaging and/or be easily combined with other optical components as a hybrid or chip-on-board assembly. All this further contributes to reduced cost.
VCSEL technology is in its infancy and its potential is just beginning to be exploited. Quite possibly, VCSELs will become the dominant type of laser diode in the future with capabilities so fantastic and costs so low as to be unimaginable today.
DISADVANTAGES OF LASER DIODES
Laser diodes do have some disadvantages in addition to the critical drive requirements. Optical performance is usually not equal to that of other laser types. In particular, the coherence length and monochromicity of some types are likely to be inferior. This is not surprising considering that the laser cavity is a fraction of a mm in length formed by the junction of the III-V semiconductor between cleaved faces. Compare this to even the smallest common HeNe laser tubes with about a 10 cm cavity. Thus, these laser diodes would not be suitable light sources for high quality holography or long baseline interferometry. But, apparently, even a $8.95 laser pointer may work well enough to experiment in these areas and some results can be surprisingly good despite the general opinion of laser diode performance.
BIBLIOGRAPHY
1). wiki.answers.com/Q/Construction_of_a_laser_diode
2). wiki.answers.com/Q/Applications_of laser__diode
3). http://cbdd.wsu.edu/kewlcontent/cdoutput/TR503/page6.htm
4). en.wikipedia.org/wiki/Tunnel_diode
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